Spring 2025
> Engineering/Engineering Technology
> EECE.5040
> 031V
Course No: EECE.5040-031V; SIS Class Nbr: 13512; SIS Term: 3430
Course Status: Registration Pending
Course Description
Fabrication of resistors, capacitors, p-n junction and Schottky Barrier diodes, BJT's and MOS devices and Integrated circuits. Topics include: silicon structure, wafer preparation, sequential techniques in micro-electronic processing, testing and packaging, yield and clean room environments. MOS structures, crystal defects, Fick's laws of diffusion; oxidation of silicon, photolithography including photoresist, development and stripping. Metallization for conductors, Ion implantation for depletion mode and CMOS transistors for better yield speed, low power dissipation and reliability. Students will fabricate circuits using the DSIPL Laboratory.
Prerequisites, Notes & Instructor
- Prerequisites: Students with a CSCE career need permission to take Graduate Level Courses.
- Section Notes: HyFlex Course
- Core Codes: STEM, HYFX
- Credits: 3; Contact Hours: 3
- Instructor: Abu Hena Muhammad Nazir Hossain
-
UMass Lowell Bookstore
When Offered & Tuition
- T | 6:30 PM-9:20 PM ET Online
- 2025 Spring: Jan 21 to May 08
- Course Level: Graduate
-
Tuition: $2250
- Note: There is a $30 per semester registration fee for credit courses.
Every effort has been made to ensure the accuracy of the information presented in this catalog. However, the Division of Graduate, Online & Professional Studies reserves the right to implement new rules and regulations and to make changes of any nature to its program, calendar, procedures, standards, degree requirements, academic schedules (including, without limitations, changes in course content and class schedules), locations, tuition and fees. Whenever possible, appropriate notice of such changes will be given before they become effective.