VLSI Fabrication

Spring 2025 > Engineering/Engineering Technology > EECE.5040 > 031V

Course No: EECE.5040-031V; SIS Class Nbr: 13512; SIS Term: 3430
Course Status: Open

Course Description

Fabrication of resistors, capacitors, p-n junction and Schottky Barrier diodes, BJT's and MOS devices and Integrated circuits. Topics include: silicon structure, wafer preparation, sequential techniques in micro-electronic processing, testing and packaging, yield and clean room environments. MOS structures, crystal defects, Fick's laws of diffusion; oxidation of silicon, photolithography including photoresist, development and stripping. Metallization for conductors, Ion implantation for depletion mode and CMOS transistors for better yield speed, low power dissipation and reliability. Students will fabricate circuits using the DSIPL Laboratory.

Prerequisites, Notes & Instructor

  • Prerequisites: Students with a CSCE career need permission to take Graduate Level Courses.
  • Section Notes: HyFlex Course
  • Core Codes: STEM, HYFX
  • Credits: 3; Contact Hours: 3
  • Instructor: Abu Hena Muhammad Nazir Hossain
  • UMass Lowell Bookstore

When Offered & Tuition

  • T | 6:30 PM-9:20 PM ET Online
  • 2025 Spring: Jan 21 to May 08
  • Course Level: Graduate
  • Tuition: $2250
  • Note: There is a $30 per semester registration fee for credit courses.

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